Curado da Silva, Rui MiguelRui MiguelCurado da SilvaCAROLI, EZIOEZIOCAROLI0000-0001-8468-7433DEL SORDO, STEFANOSTEFANODEL SORDO0000-0002-3340-1404Maia, Jorge ManuelJorge ManuelMaia2020-09-102020-09-1020179781315200729978-135177992-0978-113871034-4http://hdl.handle.net/20.500.12386/27276he semiconductor detectors technology has dramatically changed the broad field of x- and γ-rays spectroscopy and imaging. Semiconductor detectors, originally developed for particle physics applications, are now widely used for x/γ-rays spectroscopy and imaging in a large variety of fields, among which, for example, x-ray fluorescence, γ-ray monitoring and localization, noninvasive inspection and analysis, astronomy, and diagnostic medicine. The success of semiconductor detectors is due to several unique 242characteristics as the excellent energy resolution, the high detection efficiency, and the possibility of development of compact and highly segmented detection systems (i.e., spectroscopic imager). Among the semiconductor devices, silicon (Si) detectors are the key detectors in the soft x-ray band (<15 keV). Si-PIN diode detectors (Pantazis et al. 2010) and silicon drift detectors (SDDs; Lechner et al. 2004), operated with moderate cooling using small Peltier cells, show excellent spectroscopic performance and good detection efficiency below 15 keV. On the other side, germanium (Ge) detectors are unsurpassed for high-resolution spectroscopy in the hard x-ray energy band (>15 keV) and will continue to be the first choice for laboratory-based high-performance spectrometers system (Eberth and Simpson 2006).STAMPAenBook part10.1201/9781315200729-102-s2.0-85051797247https://www.taylorfrancis.com/books/e/9781315200729/chapters/10.1201/9781315200729-10FIS/01 - FISICA SPERIMENTALEERC sectors::Physical Sciences and Engineering