CdTe/CZT spectrometers with 3-D imaging capabilities

Date Issued
2017
Author(s)
•
DOI
10.1201/b18172-4
Abstract
Semiconductor detector technology has dramatically changed the broad field of x-ray and ?-ray spectroscopy and imaging. Semiconductor detectors, originally developed for particle physics applications, are now widely used for x/?-ray spectroscopy and imaging in a wide variety of fields, including, for example, x-ray fluorescence, ?-ray monitoring and localization, noninvasive inspection and analysis, astronomy, and diagnostic medicine. The success of semiconductor detectors is due to several unique characteristics, such as excellent energy resolution, high detection efficiency, and the possibility of development of compact and highly segmented detection systems. Among semiconductor devices, silicon (Si) detectors are the key detectors in the soft x-ray band (<15 keV). Si-PIN diode detectors [1] and silicon drift detectors (SDDs) [2], operated with moderate cooling by means of small Peltier cells, show excellent spectroscopic performance and good detection efficiency below 15 keV. On the other hand, germanium (Ge) detectors are unsurpassed for high-resolution spectroscopy in the hard x-ray energy band (>15 keV) and will continue to be the first choice for laboratory-based high-performance spectrometers [3]. © 2015 by Taylor & Francis Group, LLC.
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Solid-State Radiation Detectors
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